Datasheet4U Logo Datasheet4U.com

HMC407MS8G - GaAs InGaP HBT MMIC POWER AMPLIFIER

Description

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz.

The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output.

Features

  • Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required Functional Diagram General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMC403S8G HBT DIGITAL PHASE-FREQUENCY DETECTOR Hittite Microwave Corporation
HMC409LP4 GaAs InGaP HBT Hittite Microwave Corporation
HMC410MS8G GaAs MMIC Hittite Microwave Corporation
HMC411MS8G GaAs MMIC Hittite Microwave Corporation
HMC425 0.5 dB LSB GaAs MMIC Hittite Microwave Corporation

Other Datasheets by Analog Devices

Part Number Description
HMC407MS8GE GaAs InGaP HBT MMIC POWER AMPLIFIER
HMC400MS8 HIGH IP3 GaAs MMIC MIXER
HMC400MS8E HIGH IP3 GaAs MMIC MIXER
HMC401QS16G Ku-Band MMIC VCO
HMC401QS16GE Ku-Band MMIC VCO

Full PDF Text Transcription

Click to expand full text
HMC407MS8G / 407MS8GE v04.1019 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: • UNII • HiperLAN 9 Features Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required Functional Diagram General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
Published: |