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HMC327MS8GE - GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER

Download the HMC327MS8GE datasheet PDF (HMC327MS8G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas ingap hbt mmic 1/2 watt power amplifier.

Description

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Features

  • High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 Functional Diagram General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC327MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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HMC327MS8G / 327MS8GE v06.1209 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz 11 Typical Applications The HMC327MS8G(E) is ideal for: • Wireless Local Loop • WiMAX & Fixed Wireless • Access Points • Subscriber Equipment Features High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 Functional Diagram General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
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