Datasheet4U Logo Datasheet4U.com

HMC327MS8G - GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER

Description

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Features

  • High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 Functional Diagram General.

📥 Download Datasheet

Full PDF Text Transcription

Click to expand full text
HMC327MS8G / 327MS8GE v06.1209 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz 11 Typical Applications The HMC327MS8G(E) is ideal for: • Wireless Local Loop • WiMAX & Fixed Wireless • Access Points • Subscriber Equipment Features High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm2 Functional Diagram General Description The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
Published: |