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BLF7G21LS-160P - Power LDMOS transistor

Download the BLF7G21LS-160P datasheet PDF. This datasheet also covers the BLF7G21L-160P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G21L-160P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF7G21LS-160P
Manufacturer Ampleon
File Size 405.77 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G21LS-160P Datasheet

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Other Datasheets by Ampleon

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Full PDF Text Transcription

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BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1930 to 1990 1080 28 45 18 34 30 [1] 1-carrier W-CDMA 1930 to 1990 1080 28 50 18.0 36 34 [2] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
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