AA038P5-00 Datasheet 37-39 GHz GaAs MMIC Power Amplifier

Manufacturer: Alpha Industries

AA038P5-00 37-39 ghz gaas mmic power amplifier by Alpha Industries - Datasheet Preview

Datasheet Details

Part number	AA038P5-00
Manufacturer	Alpha Industries
File Size	129.29 KB
Description	37-39 GHz GaAs MMIC Power Amplifier
Datasheet	AA038P5-00 Datasheet

General Description

Alpha’s three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37–39 GHz.

The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process.

Overview

37–39 GHz GaAs MMIC Power Amplifier AA038P5-00.

Key Features

s Single Bias Supply Operation (5.5 V) s 18 dB Typical Small Signal Gain s 19 dBm Typical P1 dB Output Power at 39 GHz s 0.25 µm Ti/Pd/Au Gates 0.000 1.342 2.166 2.989 0.470 0.000 3.400 0.112 Chip Outline 1.700 1.230 1.588 s 100% On-Wafer RF and DC Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

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