AA032P1-00 Datasheet 30-36 GHz GaAs MMIC Power Amplifier

Manufacturer: Alpha Industries

AA032P1-00 30-36 ghz gaas mmic power amplifier by Alpha Industries - Datasheet Preview

Datasheet Details

Part number	AA032P1-00
Manufacturer	Alpha Industries
File Size	163.47 KB
Description	30-36 GHz GaAs MMIC Power Amplifier
Download	AA032P1-00 Download (PDF)

General Description

Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz.

The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes.

Overview

30–36 GHz GaAs MMIC Power Amplifier AA032P1-00.

Key Features

2.415 1.929 1.099 0.597 0.000 0.000 0.120 0.107 1.143 2.179 2.285 1.937 1.099 0.597 I Single Gate and Drain Biases I 25 dBm Typical P1 dB Output Power at 31 GHz I 11 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.143.

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