AA026P1-00 Datasheet 25-29 GHz GaAs MMIC Driver Amplifier

Manufacturer: Alpha Industries

AA026P1-00 25-29 ghz gaas mmic driver amplifier by Alpha Industries - Datasheet Preview

Datasheet Details

Part number	AA026P1-00
Manufacturer	Alpha Industries
File Size	98.85 KB
Description	25-29 GHz GaAs MMIC Driver Amplifier
Datasheet	AA026P1-00 Datasheet

General Description

Alpha’s three-stage reactively-matched 25–29 GHz GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz.

The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Overview

25–29 GHz GaAs MMIC Driver Amplifier AA026P1-00.

Key Features

I Single Bias Supply Operation (6 V) I 17 dB Typical Small Signal Gain I 16 dBm Typical P1 dB Output Power at 26.5 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 0.853 Chip Outline 1.760 0.112 0.194 0.000 0.000 0.561 1.418 1.647 2.120 2.582 3.200 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

More Datasheets from Alpha Industries

Part Number	Description
AA026P2-00	23.5-26.5 GHz GaAs MMIC Power Amplifier
AA026P2-A4	23.5-26.5 GHz Surface Mount Medium Power Amplifier
AA022N1-00	21-24 GHz GaAs MMIC Low Noise Amplifier
AA022N1-65	20-24 GHz Low Noise Amplifier
AA022N1-A2	20-24 GHz Surface Mount Low Noise Amplifier
AA022P1-00	18-23 GHz GaAs MMIC Power Amplifier
AA022P2-00	21-23 GHz GaAs MMIC Medium Power Amplifier
AA028N1-00	24-30 GHz GaAs MMIC Low Noise Amplifier
AA028N1-99	23-30 GHz Low Noise Amplifier
AA028N1-A2	24-30 GHz Surface Mount Low Noise Amplifier