AA022P1-00 Datasheet 18-23 GHz GaAs MMIC Power Amplifier

Manufacturer: Alpha Industries

AA022P1-00 18-23 ghz gaas mmic power amplifier by Alpha Industries - Datasheet Preview

Datasheet Details

Part number	AA022P1-00
Manufacturer	Alpha Industries
File Size	139.49 KB
Description	18-23 GHz GaAs MMIC Power Amplifier
Datasheet	AA022P1-00 Datasheet

General Description

Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz.

The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Overview

18–23 GHz GaAs MMIC Power Amplifier AA022P1-00.

Key Features

I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.5 dBm Typical P1 dB Output Power at 23 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.000 0.000 0.520 2.784 3.400 0.329 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

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