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AOM033V120X3Q - 1200V Silicon Carbide Power MOSFET

Features

  • Proprietary αSiC MOSFET technology.
  • Low loss, with low RDS, ON.
  • Fast switching with low RG and low capacitance.
  • Flexible gate voltage range (VGS = 15 to 18V).
  • Low reverse recovery diode (Qrr).
  • AEC-Q101 Automotive Qualified.

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AOM033V120X3Q 1200V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Flexible gate voltage range (VGS = 15 to 18V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply Equipment (EVSE) • Motor Drives • Automotive Inverters Pin Configuration Top View Product Summary VDS @ TJ, max IDM RDS(ON), TYP Qrr EOSS @ 800V 100% UIS Tested 1200V 190A 33mΩ 75nC 40µJ Bottom View D (1) (1) (2)(3)(4) Ordering Part Number AOM033V120X3Q Package Type TO-247-4L Form Tube Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Symbol VDS VGS,MAX VGS,OP,TRANS VGS,OP,ON VGS,OP,OFF Drain-Source Voltage Gate Source Voltage
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