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AO4802 - Dual N-Channel MOSFET

General Description

The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 12V.

The two devices may be used individually, in parallel or to form a bidirectional blocking switch.

Key Features

  • VDS (V) = 30V ID = 7A RDS(ON) < 26m Ω (VGS = 10V) RDS(ON) < 30m Ω (VGS = 4.5V) RDS(ON) < 40m Ω (VGS = 2.5V) RDS(ON) < 70m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±12 7 6 40 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C.

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📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4802L Dual N-Channel MOSFET
AO4800 30V Dual N-Channel MOSFET
AO4800B 30V Dual N-Channel MOSFET
AO4800BL Dual N-Channel MOSFET
AO4801 Dual P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rev 2: Nov 2004 AO4802, AO4802L ( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 7A RDS(ON) < 26m Ω (VGS = 10V) RDS(ON) < 30m Ω (VGS = 4.5V) RDS(ON) < 40m Ω (VGS = 2.5V) RDS(ON) < 70m Ω (VGS = 1.8V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.DataSheet4U.