• Part: AS4C512M16D3LB
  • Description: 8Gbit DDR3L
  • Manufacturer: Alliance Semiconductor
  • Size: 2.17 MB
Download AS4C512M16D3LB Datasheet PDF
Alliance Semiconductor
AS4C512M16D3LB
Features - JEDEC Standard pliant - Power supplies: VDD & VDDQ = +1.35V - Backward patible to VDD & VDDQ = +1.5V ±0.075V - Operating temperature: mercial: TC = 0~95°C Industrial: TC = -40~95°C - Supports JEDEC clock jitter specification - Fully synchronous operation - Fast clock rate: 800MHz - Differential Clock, CK & CK# - Bidirectional differential data strobe - DQS & DQS# - 8 internal banks for concurrent operation - 8n-bit prefetch architecture - Pipelined internal architecture - Precharge & active power down - Programmable Mode & Extended Mode registers - Additive Latency (AL): 0, CL-1, CL-2 - Programmable Burst lengths: 4, 8 - Burst type: Sequential / Interleave - Output Driver Impedance Control - Average refresh period - 8192 cycles/64ms (7.8us at -40°C ≦ TC ≦ +85 °C) - 8192 cycles/32ms (3.9us at +85°C ≦ TC ≦ +95°C) - Write Leveling - ZQ Calibration - Dynamic ODT (Rtt_Nom & Rtt_WR) - Ro HS pliant - Auto Refresh and Self Refresh - Package: - Two 512Mbit x 8 dies stacked (DDP) -...