AS4C512M16D3L Datasheet | Alliance Semiconductor

Description Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L- 256 Meg x 4 x 8 banks- AS4C1G8MD3L- 128 Meg x 8 x 8 banks AS4C512M16D3L - 64 Meg x 16 x 8 banks Revision Rev 1.0 Rev 2.0 Details Preliminary datasheet Amend Table 1 noted. - not released yet Date February 2016 June 2016 Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 8Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM AS4C2GM4D3L- 256 Meg x 4 x 8 banks- AS4C1G8MD3L- 128 Meg x 8 x 8 banks AS4C512M16D3L - 64 Meg x 16 x 8 banks Features - VDD = VDDQ = 1.35V (1.283- 1.45V) - Backward patible to VDD = VDDQ = 1.5V ±0.075V - Supports DDR3L devices to be backward patible in 1.5V applications - Differential bidirectional data strobe - 8n-bit prefetch architecture - Differential clock inputs (CK, CK#) - 8 internal banks - Nominal and dynamic on-die termination (ODT) for...