vhb2512f - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz.

B .112 x 45° A Ø.125 NOM.

Key Features

Common Emitter.
PG = 10 dB at 25 W/175 MHz.
Omnigold™ Metalization System E B C D F E C E.

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vhb2512f npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	vhb2512f
Manufacturer	Advanced Semiconductor
File Size	14.64 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	vhb2512f Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.5 °C/W DIM A B C D E F G H I J I GH MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.