VHB25-28F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

.112 x 45° A Ø.125 NOM.

Key Features

Omnigold™ Metalization System B C D.

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VHB25-28F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VHB25-28F
Manufacturer	Advanced Semiconductor
File Size	18.00 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VHB25-28F Datasheet

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VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System B C D MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ TSTG θ JC O F E H I G 4.0 A 65 V 4.0 V 35 V 40 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 4.4 OC/W O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.