AP4578GH
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
60V 72mΩ
9A -60V 125mΩ -6A
D2
G1 G2 S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Rating N-channel P-channel
60 -60 +25 +25
9 -6
6 -4 30 -30
8.9 0.07 -55 to 150 -55 to 150
Units
V V A A A W W/℃ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case3
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 14 110
Units ℃/W ℃/W
1 201108113
N-CH Electrical...
