AP4578GH-HF
Description
S1 G1 S2 G2
D1/D2 N-CH
P-CH
TO-252-4L
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
D1
G1 G2
S1
60V 72mΩ
9A -60V 125mΩ -6A
D2
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Drain Current3 Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
60 -60
+25 +25 9 -6
6 30
-4 -30
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-c Rthj-a
Parameter Maximum Thermal Resistance, Junction-case3 Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 14 110
Units ℃/W ℃/W
1...
