Datasheet Details
| Part number | 4957AGM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 197.96 KB |
| Description | AP4957AGM |
| Download | 4957AGM Download (PDF) |
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| Part number | 4957AGM |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 197.96 KB |
| Description | AP4957AGM |
| Download | 4957AGM Download (PDF) |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -7.4 -5.9 -30 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Continuous Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200712191 Free Datasheet http://www.datasheet4u.net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Min.
-30 -1 - Typ.
AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V 26mΩ -7.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
4957AGM | Dual P-Channel MOSFET | VBsemi |
|
4957M | Dual P-Channel 30V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| 4953GM | AP4953GM |