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4953GM Datasheet AP4953GM

Manufacturer: Advanced Power Electronics Corp

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 +20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200810075 www.DataSheet4U.com AP4953GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V o Min.

Overview

www.DataSheet4U.com AP4953GM RoHS-compliant Product Advanced Power Electronics Corp.

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More Datasheets from Advanced Power Electronics Corp

Part Number Description
4957AGM AP4957AGM