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Semiconductor
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No.
Marking
SDB3101F
DB1
Outline Dimensions
Package Code SOT-23F
2.4±0.1 1.6±0.1
1 3
2
2.9±0.1 1.90 BSC
SDB3101F
Schottky Barrier Diode
unit : mm
3
0.15±0.05 0.4±0.05
12
PIN Connections 1. Anode 2. NC 3. Cathode
0.9±0.1
0~0.1
KSD-2065-000
1
SDB3101F
Absolute maximum ratings
Characteristic
Symbol
Ratings
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature * : δ = D/T =0.33
(T<1S)
VR IFRM*
IF IFSM PD Tj Tstg
30 0.5 0.2 2 150 150 -55 ~ 150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.