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1.12 Max. 0.38
0~0.1
Semiconductor
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No.
Marking
SDB3101
DB1
Outline Dimensions
Package Code SOT-23
2.9±0.1
1.90 Typ.
2.4±0.1 1.30±0.1
1 3
2
0.45~0.60
0.4 Typ.
0.2 Min.
-0.03 +0.05
SDB3101
Schottky Barrier Diode
unit : mm
3 12 PIN Connections 1. Anode 2. NC 3. Cathode
0.124
KSD-2030-000
1
SDB3101
Absolute maximum ratings
Characteristic
Symbol
Ratings
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature * : δ = D/T =0.33
(T<1S)
VR IFRM*
IF IFSM PD Tj Tstg
30 0.5 0.