Datasheet4U Logo Datasheet4U.com

IRF634A - Advanced Power MOSFET

Key Features

  • z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max. )@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ. ) IRF634A Advanced Power MOSFET BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220 1. Gate 2. Drain 3.Source Absolute Maximum Ratings Symbol Characteristic VDSS ID Drain-to-Source Voltage Continuous Drain Current (Tc=25 ) Continuous Drain Current (Tc=100 ) IDM VGS EAS IAR EAR dv/dt Drain Current-Pulsed (1) Ga.

📥 Download Datasheet

Datasheet Details

Part number IRF634A
Manufacturer ART CHIP
File Size 344.34 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRF634A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF634A Advanced Power MOSFET Fairchild Semiconductor
IRF634A Advanced Power MOSFET Samsung
IRF634 N-CHANNEL Power MOSFET STMicroelectronics
IRF634 Power MOSFET International Rectifier
IRF634 Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by ART CHIP

Part Number Description
IRF340 N-Channel Power MOSFETs
IRF341 N-Channel Power MOSFETs
IRF342 N-Channel Power MOSFETs
IRF343 N-Channel Power MOSFETs
IRF420 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FEATURES z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max.)@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ.) IRF634A Advanced Power MOSFET BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220 1. Gate 2. Drain 3.Source Absolute Maximum Ratings Symbol Characteristic VDSS ID Drain-to-Source Voltage Continuous Drain Current (Tc=25 ) Continuous Drain Current (Tc=100 ) IDM VGS EAS IAR EAR dv/dt Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) PD Total Power Dissipation (Tc=25 ) Linear Derating Factor TJ, TSTG Operating Junction and Storage Temperature Range TL Maximum Lead Temp.