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SSCP005GSB - High Frequency High Gain PNP Power BJT

Description

technology, which is especially used to minimize saturation voltage drop.

Features

  • s PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A.

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Datasheet Details

Part number SSCP005GSB
Manufacturer AFSEMI
File Size 163.52 KB
Description High Frequency High Gain PNP Power BJT
Datasheet download datasheet SSCP005GSB Datasheet

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Full PDF Text Transcription

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SSCP005GSB High Frequency High Gain PNP Power BJT  Features PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A  Applications  Load Switch  Portable Devices  DCDC Conversion  General Description This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information  Pin configuration Pin configuration(Top view) SSC-1V0 http://www.afsemi.
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