Click to expand full text
SSCP005GS3
High Frequency High Gain PNP Power BJT
Features
PNP BJT VCE -40v
VBE -6v
Vcesat typ -150mv
Ic -3A
Applications battery powered circuits low in-line power dissipation circuits
Pin configuration
General Description This device is produced with advanced high carrier
density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. Package Information
Pin configuration(Top view)
SSC-1V0
http://www.afsemi.
SSCP005GS3 Datasheet
