Datasheet4U Logo Datasheet4U.com

SSC8428GN2 - N-Channel Enhancement Mode MOSFET

Description

The SSC8428GN2 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Package Information SSC-1V0 1/5 http://www.afsemi.com SSC8428GN2 Absolute Ma

Features

  • s VDS VGS 20V ±12V RDSon TYP 11mR@10V 13mR@4V5 ID 8A.

📥 Download Datasheet

Datasheet Details

Part number SSC8428GN2
Manufacturer AFSEMI
File Size 2.27 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8428GN2 Datasheet

📁 Similar Datasheet

  • SSC8033GS3 - P-Channel Enhancement Mode MOSFET (SPIRIT-SEMI)
  • SSC8035GS6 - P-Channel MOSFET (VBsemi)
  • SSC-AM101 - CHIP LED DEVICE (Seoul Semiconductor)
  • SSC-AWT722 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-CMX2 - Clip Addressable Output Module (Firesense)
  • SSC-D3232SL-88 - LED DOT MATRIX (Seoul Semiconductor)
  • SSC-ERT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FAT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FB102 - LED DEVICE (Seoul Semiconductor)
  • SSC-HB601 - LED DEVICE (Seoul Semiconductor)
Other Datasheets by AFSEMI

Full PDF Text Transcription

Click to expand full text
SSC8428GN2 N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 11mR@10V 13mR@4V5 ID 8A  Applications  Li-ion battery protection ;  Load swich  Pin configuration Bottom View 16mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8428GN2 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. DFN2X2-6L  Package Information SSC-1V0 1/5 http://www.afsemi.
Published: |