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SSC8415GS6
P-Channel Enhancement Mode MOSFET
Features
VDS
VGS
-20V ±12V
RDSon TYP 35mR@-4V5 44mR@-2V5
ID -4A
Applications
Load Switch
Portable Devices DCDC conversion Pin Configuration
57mR@-1V8
Top View
General Description
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
D: Drain; G: Gate; S: Source
③ ①②
SOT23 Unit:m m
SSC-1V1
http://www.afsemi.
SSC8415GS6 Datasheet
