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SSC8066GS6 - N-Channel Enhancement Mode MOSFET

Description

on-state resistance.

Features

  • s VDS 60V VGS ±20V RDSon TYP 45mR@10V 80mR@4V5 ID 3A.

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Datasheet Details

Part number SSC8066GS6
Manufacturer AFSEMI
File Size 157.81 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8066GS6 Datasheet

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Full PDF Text Transcription

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SSC8066GS6 N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 45mR@10V 80mR@4V5 ID 3A  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information ③ ①② SSC-V1.0 SOT23 Units:mm http://www.afsemi.
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