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SSC8062GS1
N-Channel Enhancement Mode Power MOSFET
Features
Applications
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 6A
Load Switcing;
PWM application
General Description
Pin configuration
SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.
Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8062GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current
Continuous Pulse
Total Power Dissipation (note1)
Operating and Storage Junction Temperature Range
Note1: Surface Mounted on 1in pad area.
SSC8062GS1 Datasheet
