SSC8036GS6B Datasheet PDF (N-Channel Enhancement Mode MOSFET)

SSC8036GS6B - N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin configuration Top View D 3 Package Informatio

Features

s.
VDS 30V VGS ±20V RDSon TYP 19mR@10V 23mR@4V5 ID 5A.
General.

Datasheet Details

Part number	SSC8036GS6B
Manufacturer	AFSEMI
File Size	585.02 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8036GS6B Datasheet

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Full PDF Text Transcription

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SSC8036GS6B N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 19mR@10V 23mR@4V5 ID 5A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.com 1/6 Analog Future  Order information Device Package SSC8036GS6B SOT23 SSC8036GS6B Marking Shipping 3000/Tape&Reel  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current a VGS@4.

Published: Dec 15, 2018 |