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SSC8036GS6 - N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin configuration Top View D 3 Package Informatio

Features

  • s.
  • VDS 30V VGS ±20V RDSon TYP 24mR@10V 36mR@4V5 ID 6A.
  • General.

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Datasheet Details

Part number SSC8036GS6
Manufacturer AFSEMI
File Size 121.71 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8036GS6 Datasheet

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Full PDF Text Transcription

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SSC8036GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 24mR@10V 36mR@4V5 ID 6A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.
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