Datasheet4U Logo Datasheet4U.com

PED8810M - N-Channel Enhancement Mode Power MOSFET

PED8810M Description

PED8810M N-Channel Enhancement Mode Power MOSFET .
The PED8810M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PED8810M Features

* VDS = 20V,ID =7A RDS(ON) < 25mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of PED8810M PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
PED8810M
Manufacturer
semi one
File Size
226.33 KB
Datasheet
PED8810M-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • PED2015M - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED20D09M - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED2420 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED3008MA - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED30D12M - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED30P09M - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PED645K - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET semi one
semi one PED8810M-like datasheet