PED2311N - N-Channel Enhancement Mode Power MOSFET

semi one

The PED2311N by semi one is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	PED2311N
Manufacturer	semi one
File Size	393.89 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2311N-semione.pdf
Additional preview pages of the PED2311N datasheet.

The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |