PE8806 - N-Channel Enhancement Mode Power MOSFET

semi one

The PE8806 by semi one is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	PE8806
Manufacturer	semi one
File Size	883.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8806-semione.pdf
Additional preview pages of the PE8806 datasheet.

The PE8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

📁 PE8806 Similar Datasheet

PE8806B - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8810A - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8810B - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8810C - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8816 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8050 - NPN-PNP General Purpose Complementary Amplifiers & Output Drivers (Fairchild Semiconductor)
PE80Q04N - SBD MODULE (Nihon Inter Electronics)
PE80QL03N - SBD (Nihon Inter Electronics)

Other Datasheets by semi one

Published: Dec 3, 2018 |