Datasheet4U.com

PE8200 - N-Channel Enhancement Mode Power MOSFET

semi one

📥 Download Datasheet

PE8200 Datasheet Preview — Preview of PE8200 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	PE8200
Manufacturer	semi one
File Size	217.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8200-semione.pdf

PE8200 Product details

Description

The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

📁 PE8200 Similar Datasheet

PE8205L - N-Channel Power MOSFET (ChipSourceTek)
PE8207 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8207C - N-Channel Power MOSFET (ChipSourceTek)
PE8209HM1 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8209HN - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8250K - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8250M - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE8270M - N-Channel Power MOSFET (ChipSourceTek)

Other Datasheets by semi one

PE8203 - N-Channel Enhancement Mode Power MOSFET
PE8203A - N-Channel Enhancement Mode Power MOSFET
PE8205 - N-Channel Enhancement Mode Power MOSFET
PE8205A - N-Channel Enhancement Mode Power MOSFET
PE80H11 - N-Channel Enhancement Mode Power MOSFET
PE80H13 - N-Channel Enhancement Mode Power MOSFET

Published: Dec 3, 2018 |