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PE3409 - P-Channel Enhancement Mode Power MOSFET

Description

The PE3409 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in load switch and battery protection applications.

Features

  • VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.

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Datasheet Details

Part number PE3409
Manufacturer semi one
File Size 861.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3409 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE3409 P-Channel Enhancement Mode Power MOSFET Description The PE3409 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features ● VDS =-30V,ID =-5.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.
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