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PE3400A - N-Channel Enhancement Mode Power MOSFET

General Description

The PE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet Details

Part number PE3400A
Manufacturer semi one
File Size 622.02 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3400A Datasheet

Full PDF Text Transcription (Reference)

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PE3400A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.