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PE2012 - N-Channel Enhancement Mode Power MOSFET

PE2012 Description

PE2012 N-Channel Enhancement Mode Power MOSFET .
The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

PE2012 Features

* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

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Datasheet Details

Part number
PE2012
Manufacturer
semi one
File Size
574.74 KB
Datasheet
PE2012-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE2012-like datasheet