Datasheet Details
| Part number | PE2017 |
|---|---|
| Manufacturer | semi one |
| File Size | 211.22 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PE2017 Datasheet
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Description
The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
Features
- VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V ESD Rating: 2500V HBM.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package Schematic diagram Marking and pin Assignment.