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PE29102 - High-speed FET Driver

Description

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs.

Features

  • High- and low-side FET drivers.
  • Dead-time control.
  • Fast propagation delay, 9 ns.
  • Tri-state enable mode.
  • Sub-nanosecond rise and fall time.
  • 2A/4A peak source/sink current.
  • Package.
  • flip chip.

📥 Download Datasheet

Datasheet Details

Part number PE29102
Manufacturer pSemi
File Size 1.90 MB
Description High-speed FET Driver
Datasheet download datasheet PE29102 Datasheet

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Part Number Description
PE29101 High-speed FET Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE29102 Document Category: Product Specification UltraCMOS® High-speed FET Driver, 40 MHz Features • High- and low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – flip chip Applications • Class D audio • DC–DCconversions • AC–DC conversions • Wireless charging • Envelope tracking • LiDAR Figure 1 • PE29102 Functional Diagram Product Description The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz.
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