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UF4C120053K3S - SiC Cascode JFET

Description

The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET.

on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

  • On-resistance RDS(on): 53 mW.
  • Maximum Operating Temperature of 175 C.
  • Excellent Reverse Recovery: Qrr = 117 nC.
  • Low Body Diode VFSD: 1.28 V.
  • Low Gate Charge: QG = 37.8 nC.
  • Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2 and CDM Class C3.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 53 mohm UF4C120053K3S Description The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices. Available in the TO247-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.