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UF4C120070B7S - SiC Cascode JFET

General Description

The UF4C120070B7S is a 1200V, 72mΩ G4 SiC FET.

Key Features

  • w On-resistance RDS(on): 72mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 101nC w Low body diode VFSD: 1.43V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w D2PAK-7L package for faster switching, clean gate waveforms Typical.

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Other Datasheets by Qorvo

Part Number Description
UF4SC120030K4S SiC JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF4C120070B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 72 mohm Rev B, January 2025 Description D (Tab) Tab 1 7 G (1) KS (2) S (3-7) Part Number UF4C120070B7S Package D2PAK-7L Marking UF4C120070B7S The UF4C120070B7S is a 1200V, 72mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.