PMV90ENE - N-channel MOSFET

Nexperia

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Logic level compatible.
Very fast switching.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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PMV90ENE n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMV90ENE
Manufacturer	Nexperia
File Size	718.27 KB
Description	N-channel MOSFET
Datasheet	PMV90ENE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV90ENE 30 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.