Datasheet4U Logo Datasheet4U.com

PMV50UPE - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • 3 kV ESD protected.
  • Trench MOSFET technology.
  • Low threshold voltage 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMV56XN extremely low level FET NXP Semiconductors
PMV117EN uTrenchMOS enhanced logic level FET NXP
PMV117EN N-Channel MOSFET VBsemi
PMV130ENEA N-channel Trench MOSFET NXP
PMV160UP 1.2A P-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMV50ENEA N-channel MOSFET
PMV50EPEA P-channel MOSFET
PMV50XP P-channel Trench MOSFET
PMV52ENEA N-channel MOSFET
PMV55ENEA N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology • Low threshold voltage 1.3 Applications • Relay driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -3.
Published: |