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PMV250EPEA - P-channel MOSFET

PMV250EPEA Description

PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV250EPEA Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* 1 kV ESD protected

PMV250EPEA Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

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