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PMV160UP - P-channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • 1.8 V RDSon rated.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tj = 25 °C VGS = -4.5 V; Tamb 25 °C -- -8 - [1] - - -20 V 8V -1.
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