Datasheet4U Logo Datasheet4U.com

PMDXB950UPE - dual P-channel MOSFET

PMDXB950UPE Description

PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1.General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic pack.

PMDXB950UPE Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
* Drain-source on-state resistance RDSon = 1.02

PMDXB950UPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current

📥 Download Datasheet

Preview of PMDXB950UPE PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PMDXB1200UPE - dual P-channel Trench MOSFET (NXP)
  • PMDXB550UNE - dual N-channel Trench MOSFET (NXP)
  • PMDXB600UNE - dual N-channel Trench MOSFET (NXP)
  • PMD02N60N - N-Channel MOSFETs (Potens semiconductor)
  • PMD03N80R - N-Channel MOSFETs (Potens semiconductor)
  • PMD04N65M - N-Channel MOSFETs (Potens semiconductor)
  • PMD05N50M - N-Channel MOSFETs (Potens semiconductor)
  • PMD10K - SILICON POWER DARLING TRANSISTORSl (Central Semiconductor Corp)

📌 All Tags

dual P-channel MOSFET nexperia
nexperia PMDXB950UPE-like datasheet