PMDXB1200UPE - dual P-channel Trench MOSFET

NXP

The PMDXB1200UPE by NXP is a dual P-channel Trench MOSFET. Below is the official datasheet preview.

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PMDXB1200UPE dual P-channel Trench MOSFET by NXP - Datasheet Preview — Official preview page of the **PMDXB1200UPE** dual P-channel Trench MOSFET datasheet (NXP).

Datasheet Details

Part number	PMDXB1200UPE
Manufacturer	NXP
File Size	230.89 KB
Description	dual P-channel Trench MOSFET
Datasheet	PMDXB1200UPE-NXP.pdf
Additional preview pages of the PMDXB1200UPE datasheet.

PMDXB1200UPE Product details

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low threshold voltage.
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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Published: Feb 2, 2016 |