Datasheet Details
- Part number
- PMCM6501VPE
- Manufacturer
- nexperia ↗
- File Size
- 771.93 KB
- Datasheet
- PMCM6501VPE-nexperia.pdf
- Description
- P-channel MOSFET
PMCM6501VPE Description
PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
PMCM6501VPE Features
* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology
PMCM6501VPE Applications
* Battery switch
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -12 V
VGS gate-source voltage
-8 -
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