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PMCM650CUNE - Common Drain N-channel Trench MOSFET

Description

N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features

  • Common-drain type for bi-directional current flow.
  • Low threshold voltage.
  • Ultra small package: 0.98 × 1.48 × 0.35 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3.

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Datasheet Details

Part number PMCM650CUNE
Manufacturer Nexperia
File Size 393.68 KB
Description Common Drain N-channel Trench MOSFET
Datasheet download datasheet PMCM650CUNE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMCM650CUNE 20 V, Common Drain N-channel Trench MOSFET Rev. 1.0 — 8 November 2017 Product data sheet WLCSP6 1 Product profile 1.1 General description N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits • Common-drain type for bi-directional current flow • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications • Loadswitch • Battery Protection • Battery Management 1.4 Quick reference data Table 1.
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