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GAN039-650NTB Gallium Nitride (GaN) FET

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Description

CCPAK1212i GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 5 December 2023 Product data sheet 1.General descript.
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package.

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Features

* Simplified driver design as standard level MOSFET gate drivers can be used:
* 0 V to 12 V drive voltage
* Gate threshold voltage VGSth of 4 V
* Robust gate oxide with ±20 V VGS rating
* High gate threshold voltage of 4 V for gate bounce immunity
* Lo

Applications

* Hard and soft switching converters for industrial and datacom power
* Bridgeless totempole PFC
* PV and UPS inverters
* Servo motor drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot

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