GAN039-650NTB - Gallium Nitride (GaN) FET

Datasheet Summary

Description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package.

offering superior reliability and performance.

Features

Simplified driver design as standard level MOSFET gate drivers can be used:.
0 V to 12 V drive voltage.
Gate threshold voltage VGSth of 4 V.
Robust gate oxide with ±20 V VGS rating.
High gate threshold voltage of 4 V for gate bounce immunity.
Low body diode Vf for reduced losses and simplified dead-time adjustments.
Transient over-voltage capability for increased robustness.
CCPAK package technology:.
Improved reli.

nexperia

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Datasheet Details

Part number	GAN039-650NTB
Manufacturer	nexperia
File Size	476.31 KB
Description	Gallium Nitride (GaN) FET
Datasheet	GAN039-650NTB Datasheet
Additional preview pages of the GAN039-650NTB datasheet.

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Full PDF Text Transcription

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CCPAK1212i GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 5 December 2023 Product data sheet 1. General description The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2.

Published: Jul 10, 2024 |