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GAN111-650WSB Gallium Nitride (GaN) FET

GAN111-650WSB Description

TO-247-3L GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package 24 June 2024 Product data sheet 1.General .
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package.

GAN111-650WSB Features

* Ultra-low reverse recovery charge
* Simple gate drive (0 V to +10 V or +12 V)
* Robust gate oxide (±20 V capability)
* High gate threshold voltage (+4 V) for very good gate bounce immunity
* Very low source-drain voltage in reverse conduction mode

GAN111-650WSB Applications

* Hard and soft switching converters for industrial and datacom power
* AC/DC Bridgeless totem-pole PFC
* DC/DC High-frequency resonant converters
* Datacom and telecom (AC/DC and DC/DC) converters
* Solar (PV) inverters
* Servo motor drives

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